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Books

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[B.1]   T. R. Lenka, and H. P. T. Nguyen, “Nanoelectronics Devices and Applications”, Benthem, 2024

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[B.2]     T. R. Lenka, and H. P. T. Nguyen, “HEMT Technology and Applications”, Springer, 2022

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[B.3]    H. P. T. Nguyen, “Nanostructured Light-Emitters”, MPDI, Switzerland, 2020

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Book Chapters

[BC.1] R. Singh, T. R. Lenka, H. P. T. Nguyen, “3D Simulation Study of Laterally Gated AlN/β-Ga2O3 HEMT Technology for RF and High-Power Nanoelectronics”, HEMT Technology and Applications, Springer, 2022  

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[BC.2]J. Manta, G. P. Rao, T. R. Lenka, M. Choudhury, and H. P. T. Nguyen, “III-Nitride HEMTs for THz Applications,” Terahertz Devices, Circuits and Systems, 2022

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[BC.3]R. T. Velpula, B. Jain, S. Das, T. R. Lenka, and H. P. T. Nguyen, “Advantages of Polarization Engineered Quantum Barriers in III-Nitride Deep Ultraviolet Light-Emitting Diodes: An Electron-Blocking Layer Free Approach,” Springer LNEE Series: Micro and Nanoelectronics Devices, Circuits and Systems - Select Proceedings of MNDCS 2022

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[BC.4 R. Singh, T. R. Lenka, H. P. T. Nguyen, “Evolution and Present State-of-Art Gallium Oxide HEMTs–The Key Takeaways”, HEMT Technology and Applications, Springer, 2022  

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[BC.5] R. T. Velpula, B. Jain, D. Samadrita, T. R. Lenka, and H. P. T. Nguyen, “Advantages of Polarization Engineered Quantum Barriers in III-Nitride Deep Ultraviolet Light-Emitting Diodes: An Electron Blocking Layer Free Approach”, Micro and Nanoelectronics Devices, Circuits and Systems, Springer, 2022

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[BC.6] R. Singh, T.R. Lenka, D. Panda, R.T. Velpula, B. Jain, H.Q.T. Bui, and H.P.T. Nguyen. “RF  Performance of Ultra-wide Bandgap HEMTs, Emerging Trends in Terahertz Solid State Physics and Devices”, Springer, 2020  

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[BC.7] R. Singh, T. R. Lenka, D. Panda, R. T. Velpula, B. Jain, H. Q. T. Bui, and H. P.T. Nguyen, “Ga2O3 Based Heterostructure FETs (HFETs) for Microwave and Millimeter-Wave Applications”, Emerging Trends in Terahertz Engineering and System Technologies, Springer, 2020

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[BC.8] Q. Wang, H. P. T. Nguyen, S. Zhao, and Z. Mi, “Axial GaN nanowire-based light emitting diodes,” chapter in Wide band gap semiconductor nanowires for optical devices, edited by V. Consonni and G. Feuillet, Hermes Science Publishing, Published online on August 08, 2014 

Patents

  1. H. P. T. Nguyen, R. T. Velpula, and B. Jain, “Resistive Switching in a RRAM Device”, US Provisional Patent, Serial No. 63/410,293
     

  2. Z. Mi, , S. Zhao, "Methods and devices for solid state nanowire devices" (US 2016/0027961 A1)
     

  3. Z. Mi, , and K. Cui, "High efficiency broadband semiconductor nanowire devices and methods of fabricating without foreign metal catalysis", US 2012/0205613

Papers

2023

  1. R. T. Velpula, B. Jain, and , “ Highly Uniform Ultralow Power Resistive Switching in SiNx/SiO2 RRAM Devices”, IEEE Transactions on Electronic Devices (Under Review)

  2. T. R. Lenka, S. K. Tripathy, and , “Quantum Transport in InAlAs/InP based HEMTs by Solving Schrodinger and Poisson Equations”, (Under Review)

  3. X. Liu, R. T. Velpula, , and Z. Mi, “On the Threshold Current of Electrically Pumped Mid and Deep Ultraviolet Laser Diodes”, Applied Physics Letters (Under Review)

  4. S. Das, T. R. Lenka, S. Sadaf, R. T. Velpula, and , “Impact of Prestrained Graded InGaN/GaN Interlayer towards Enhanced Optical Characteristics of Multi-quantum Well LED based on Silicon Substrate”,

  5. G. P. Rao, R. Singh, N. E. I. Boukortt, G. Crupi, and , “Design and Simulation of T-Gate AlN/β-Ga2O3 HEMT for DC, RF and High-Power Nanoelectronics Switching Applications”,

  6. G. P. Rao, R. Singh, T. R. Lenka, N. E. Boukortt, and , “Simulation Modelling of III-Nitride/β-Ga2O3 Nano-HEMT for Microwave and Millimeter Wave Application”, , (In Press)

  7. R. Paul, T. R. Lenka, F. A. Tulukdar, N. E. I. Boukortt, and "Investigation of Novel n-Doped a-Si/CZTSe Ultrathin-Film for Enhanced Performance," IEEE Transactions on Electron Devices (In Press)

  8. G. P. Rao, , Nour El. I. Boukortt, Nour El. I. Boukortt, S. Md Sadaf; , “"Investigation of Performance Enhancement of a Recessed Gate Field-Plated AlGaN/AlN/GaN Nano-HEMT on β-Ga2O3 Substrate with Variation of AlN Spacer Layer Thickness", Journal of Materials Science: Materials in Electronics, 34 (2023) 1442.

  9. G. P. Rao, , Nour El. I. Boukortt and , “” 2023; e3138, pp.1-15.

  10. S. Das, , F. A. Talukdar, and R. T. Velpula, and , “” Vol. 36, No 1, March 2023, pp. 91-101

  11. G. P. Rao, R. Lenka, “” 293 (2023) 116498

  12. T. T. Doan, T. Q. Le, R. T. Velpula, M. B. S. Muthu, P. Deren, , and H.-D., NguyenHighly stable white light emission from III-nitride nanowire LEDs utilizing nanostructured alumina doped Mn4+ and Mg2+”,

  13. S. Shrestha, R. T. Velpula, B. P. Pandey, M. B. S. Muthu, T. A. N. Nguyen, and ,Characteristics of leakage currents in InGaN/AlGaN nanowire based red micro-light-emitting diodes”, , 62 (2023) 455

  14. S. Das, R. Lenka, F. A. Talukdar, R. T. Velpula and , “Design and Analysis of Novel High-Performance III-Nitride MQW-based Nanowire White-LED using HfO2/SiO2 Encapsulation”, , 55 (2023) 67

  15. G. Purnachandra Rao, Rajan Singh, Nour El. I. Boukortt, Sharif Md. Sadaf, and , “,” vol. 52, pp. 1948–1957, 2023

  16. R. T. Velpula, B. Jain, and , “Low-power multilevel resistive switching in β-Ga2O3 based RRAM devices”, Nanotechnology, 34 (2023) 075201

 

2022

  1. G. P. Rao, R. Singh, T. R. Lenka, and , “Simulation modelling of III-nitride/β-Ga2O3 HEMT for emerging high-power nanoelectronics applications”, Journal of Korean Physics Society, 81 (2022) 876

  2. P. K. Esubonteng, , and R. Rojas-Cessa, “STAR: A Carrier Sense Agnostic MAC Scheme for a Crowded NLoS-FSOC Optical LAN”, , 14 (2022) 815

  3. D. K. Panda, , R. Singh, V. Goyal, Nour El. I. Boukortt, and H. P. T. Nguyen, “Analytical Modelling of Dielectric Modulated Negative Capacitance-MoS2 FET for Next-Generation Label-Free Biosensor,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Wiley), 36 (2022) pp. 1-14.

  4. (Invited) , R. T. Velpula, M. Patel, B. Jain, and A. Marangon, “Enhanced Efficiency of AlInN Nanowire Ultraviolet Light-Emitting Diodes Using Photonic Crystal Structures”, ECS Transaction, 109 (2022) 3

  5. (Invited) , “Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices”, Nature Light: Science and Applications, 11 (2022) 164

  6. R. T. Velpula, B. Jain, M. Patel, F. M. Shakiba, N. Q. Toan, H.-D. Nguyen, and , “High-efficiency InGaN blue LEDs with reduced positive sheet polarization”, , 61 (2022) 4967

  7. R. Singh, T. R. Lenka, D. K. Panda, , N. E. I. Boukortt, G. Crupi, “Analytical modeling of I–V characteristics using 2D Poisson equations in AlN/β-Ga2O3 HEMT”, , 145 (2022) 106627

  8. S. Das, T. R. Lenka, F. A. Talukdar, R. T. Velpula, B. Jain, , and G. Crupi, “Effects of Polarization-Induced Doping and Graded Composition in an
    Advanced Multiple Quantum Well InGaN/GaN UV-LED for Enhanced Light Technology”, , 4 (2022) 015030

  9. V. Sivathanu, T. R. Lenka, V. Goyal, , “Carrier transport mechanism in bottom gate thin-film transistor with SnO as active layer for CMOS displays”, , 35 (2022) e2975

  10. D. H. Anh, N. Q. Toan, P. C. T. Tung, C. T. Son, , and H.-D. Nguyen, “Fabrication of ultrathin alumina membranes utilizing wast alumium cans”, , 60 (2022) 84

  11. T. R. Lenka, R. Singh, S. K. Tripathy, V. Goyal, T. K. Nguyen, and , “2DEG characteristics of InAlAs/InP based HEMTs by solving Schrödinger and Poisson equations followed by device characteristics”, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 35 (2022) e2941

  12. R. T. Velpula, B. Jain, R. Wang, T. R. Lenka, and , “Polarization-Engineered P-type Electron-Blocking Layer Free III-Nitride Deep-Ultraviolet Light-Emitting Diodes for the Enhanced Carrier Transport”, Journal of Electronic Materials, 55 (2022) 838

 

2021

  1. H. Q. T. Bui, D. H. Anh, D. T. Tuyet, R. T. Velpula, B. Jain, and , H.-D. Nguyen, “Enhancing Efficiency of AlGaN Ultraviolet‐B Light‐Emitting Diodes with Graded AlGaN Hole Injection Layer”, Physica Status Solidi (a), 218 (2021) 2100003

  2. S. Rajan, T. R. Lenka, D. Panda, and , “Investigation of β-Ga2O3-based HEMTs using 2D Simulations for Low Noise Amplification and RF Applications", , 3 (2021) 035042

  3. T. H. Q. Vu, T. T. Doan, B. Jain, R. T. Velpula, T. C. T. Pham, and , and H.-D. Nguyen, “Improving Color Quality of Nanowire White Light-Emitting Diodes with Mn4+ Doped Fluoride Nanosheets”, 12 (2021) 965

  4. R. T. Velpula, B. Jain, T. R. Lenka, and , “Controlled Electron Leakage In Electron Blocking Layer Free InGaN/GaN Nanowire Light-Emitting Diodes”, 34 (2021) 393

  5. R. Singh, T. R. Lenka, and , “Analytical Study of Energy Band Parameters and Lattice Temperature on Conduction Band Offset in AlN/Ga2O3 HEMT”, 34 (2021) 323

  6. M. Patel, B. Jain, R. T. Velpula, and , "Effect of HfO2 Passivation Layer on Light Extraction Efficiency of AlInN Nanowire Ultraviolet Light-Emitting Diodes." 102 (2021), 35

  7. B. Jain, R. T. Velpula, M. Patel, and , "Controlled carrier mean free path for the enhanced efficiency of III-nitride deep-ultraviolet light-emitting diodes," , 60, 3088-3093 (2021)

  8. B. Jain, R.T Velpula. M. Patel, S.M. Sadaf, , “Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers”, Micromachines, 12, 334 (2021).

  9. B. Jain, R. T. Velpula, M. Patel, and . "High performance electron blocking layer free ultraviolet light-emitting diodes." In , International Society for Optics and Photonics, 11680, 1168012. 2021.

  10. R. Singh, D. Panda, T. R. Lenka, R. T. Velpula, B. Jain, H. Q. T. Bui, and Wiley International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 34 (2021) e2794 (ranked as top 10 most downloaded papers (during

 

2020

  1. D. K. Panda, T. R. Lenka, R. T. Velpula, B. Jain, H. Q. T. Bui, T. T. Pham, and , “Single and Double Gate based GaN MOS-HEMTs for Design of Low Noise Amplifier: A Comparative Study”, , 14 (2020) 1018

  2. H. Q. T. Bui, R. T. Velpula, B. Jain, and , “III-Nitride Based Narrow Band Far-UVC LEDs for Airborne and Surface Disinfection”, , 98 (2020) 83

  3. D. K. Panda, R. Singh, T. R. Lenka, T. T. Pham, R. T. Velpula, B. Jain, H. Q. T. Bui, and , “Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of low-noise amplifiers: a comparative study”, IET Circuits, Devices & Systems 14 (2021) 1018

  4. R. T. Velpula, B. Jain, S. Velpula, H.-D., Nguyen, and , “High Performance Electron Blocking Layer Free Deep Ultraviolet Light-Emitting Diodes Implementing a Strip-in-a-Barrier Structure”,, 45 (2020) 5125

  5. R. Singh, T. Lenka, R. T. Velpula, B. Jain, H. Q. T. Bui, and , "Investigation of Current Collapse and Recovery Time due to Deep Level Defect Traps in β-Ga2O3 HEMT", Journal of Semiconductor, 41 (2020) 102802

  6. Editor’s Pick: H. Q. T. Bui, R. T. Velpula, B. Jain, M. R. Philip, H. D. Tong, T. R. Lenka, and H. P. T. Nguyen, “High Performance AlGaN Nanowire Ultraviolet Light-Emitting Diodes with Potassium Hydroxide and Ammonium Sulfide Surface Passivation”, Applied Optics, 59 (2020) 7352

  7. D.T. Tuyet, V.T.H. Quan, B. Bondzior, P.J. Deren, , L.A. Tuyen, N.Q. Hung and H.-D. Nguyen. “High red emission performance of porous structural K2SiF6:Mn4+ dots-in-nanosphere synthesized using soft templates”, 28 (2020) 26189

  8. B. Jain, R. T. Velpula, S. Velpula, H.-D. Nguyen, and , "Enhanced Hole Transport in AlGaN Deep Ultraviolet Light-Emitting Diodes Using Double-Side Step Graded Superlattice Electron Blocking Layer", , 27 (2020) 2564

  9. R. Singh, T. R. Lenka, and , “Optimization of Dynamic Source Resistance in a

  10. B. Jain, M. Tumuna, H.Q.T. Bui, J. Jude, T. T. Pham, T. V. Le, A. V. Hoang, R.Wang, and . “Enhancing the light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes with photonic crystal structures”, 28 (2020) 22909

  11. R.T. Velpula, B. Jain, H.Q.T. Bui, J. Jude, M. Tumuna, H.-D. Nguyen, T.R. Lenka, and H. P. T. Nguyen. “Improving carrier transport in AlGaN deep ultraviolet light-emitting diodes using a strip-in-a-barrier structure”, Applied Optics, 59 (2020) 5276

  12. R. Singh, D. Panda, T. Lenka, R. T. Velpula, B. Jain, H. Q. T. Bui, and , “

  13. R. T. Velpula, M. R. Philip, B. Jain, H.-D. Nguyen, R. Wang, and , “Epitaxial Growth and Characterization of AlInN Based Core-Shell Nanowire Light Emitting Diodes Operating in the Ultraviolet Spectrum”, , 10 (2020) 2547

  14. R. T. Velpula, B. Jain, H. Q. T. Bui, T. T. Pham, T. V. Le, H.-D. Nguyen, T. R. Lenka, and “ , 10 (2020) 472.

  15. B. Jain, R. T. Velpula, H. Q. T. Bui, H.-D. Nguyen, T. R. Lenka, T. K. Nguyen, and “

 

2019

  1. Invited Review: R. T. Velpula, B. Jain, H. Q. T. Bui, and H. P. T. Nguyen, “Full-Color III-Nitride Nanowire Light-Emitting Diodes”, Journal of Advanced Engineering and Computation, 3 (2019) 551.

  2. H. Q. T. Bui, R. T. Velpula, B. Jain, O. H. Aref, H.-D. Nguyen, T. R. Lenka, and , “Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays”, , 10 (2019) 492.

  3. P. T. Dang, K. Q. Le, Q. M. Ngo, , and T. K. Nguyen, “Guided Mode Resonance Filter with Ultra Narrow Bandwidth over the Visible Frequencies for Label-Free Optical Sensor”, , 3 (2019) 405.

  4. M. Rajan Philip, R. Babu“Enhanced Efficiency of Dye-Sensitized Solar Cells based on Polyol Synthesized Nickel-Zinc Oxide Composites”,, 48 (2019) 252.

 

2018

  1. T. T. Hoang, Q. M. Ngo, D. L. Vu, and “Controlling Fano Resonances in Multilayer Dielectric Gratings Towards Optical Bistable Devices, , 8 (2018) 16404.

  2. M. Rajan Philip, R. Babu

  3. M. Rajan Philip and , “Full-Color InGaN/AlGaN Nanowire LEDs for Solid-State Lighting and Display”, , March 2018 Issue 66, page 50.

  4. Khai Q. Le, S. K. Ho, N. H. T. Tran, Q. M. Ngo, and , "," (2018) 045106.

  5. M. Rajan Philip, T. H. Q. Bui, M. Djavid, M. N. Bhuyian, and H. P. T. Nguyen, “Phosphor Free III-Nitride Nanowire White-Light Emitting Diodes for Visible Light Communication”, Proc. SPIE 10595, Active and Passive Smart Structures and Integrated Systems XII, 105953.

  6. M. Rajan Philip, D. D. Choudhary, T. H. Q. Bui, M. Djavid, and H. P. T. Nguyen, "Molecular Beam Epitaxial Growth and Device Characterization of AlGaN UV-B Nanowire Light-Emitting Diodes", , 1 (2018) 3.

  7. T. T. Hoang, Q. M. Ngo, D. L. V, K. Q. Le, T. K. Nguyen, and H. P.T. Nguyen, "Induced high-order resonance linewidth shrinking with multiple coupled resonators in silicon-organic hybrid slotted two-dimensional photonic crystals for reduced optical switching power in bistable devices", , 12 (2018) 016014.

  8. M. Djavid, D. D. Choudhary, M. R. Philip, T. H. Q. Bui, O. Akinnouye, T. T. Pham, and H. P. T. Nguyen, “Effects of Optical Absorption in Deep Ultraviolet Nanowire Light-Emitting Diodes”, Photonics and Nanostructures - Fundamentals and Applications, 28 (2018) 106.

  9. M. Djavid, M. H. T. Dastjerdi, M. R. Philip, D. D. Choudhary, T. T. Pham, A. Khreishah, and H. P. T. Nguyen, “Photonic Crystal Based Permutation Switch for Optical Networks”, Photonic Network Communications, 35 (2018) 90.

 

2017

  1. M. R. Philip, D. D. Choudhary, M. Djavid, T. H. Q. Bui, H.-D Pham, D. Misra, K. Q. Le, J. Piao,  and H. P. T. Nguyen“Fabrication of Phosphor-Free III-Nitride Nanowire Light-Emitting Diodes on Metal Substrates for Flexible Photonics”, ACS Omega, 2 (2017) 5708.

  2.  M. Djavid, M. H. T. Dastjerdi, M. R. Philip, D. D. Choudhary, A. Khreishah, and H. P. T. Nguyen, “4-Port Reciprocal Optical Circulators Employing Photonic Crystals for Integrated Photonics Circuits”, Optik - International Journal for Light and Electron Optics, 144 (2017) 586.

  3. M. R. Philip, D. D. Choudhary, M. Djavid, K. Q. Le, and H. P. T. Nguyen “High Efficiency Green/Yellow and Red InGaN/AlGaN Light-Emitting Diodes Grown by Molecular Beam Epitaxy”, Journal of Science: Advanced Materials and Devices, 2 (2017) 150.

  4. Editor’s Pick: M. R. Philip, D. D. Choudhary, M. Djavid, M. N. Bhuyian, J. Piao, D. Misra, T. T. Pham, and H. P. T. Nguyen, “Controlling Color Emission of InGaN/AlGaN Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy”, Journal of Vacuum Society Technology B, 35 (2017) 02B108 (Featured as Editor’s pick and highlighted in Beneath the AVS Surface, May 01 2017, entitled "Researchers Create Phosphor-Free LEDs that Emit Light Across the Visible Spectrum" , http://campaign.r20.constantcontact.com/render?m=1101176060676&ca=d082d4b3-eae4-4e59-aef3-e632b84d314f).

 

2016

  1. H. P. T. Nguyen, S. Arafin, J. Piao, and T. V. Cuong, “Nanostructured Optoelectronics: Materials and Devices”, Journal of Nanomaterials, 2016 (2016) 2051908

  2. K. Q. Le, H. P.T. Nguyen, Q. M. Ngo, A. Canimoglu, Nurdogan Can, “Experimental and numerical optical characterization of Plasmonic Copper Nanoparticles Embedded in ZnO Fabricated by Ion Implantation and Annealing”, Journal of Alloys and Compounds, 669 (2016) 246

  3. R. Wang, Y. H. Ra, Y. Wu, S. Zhao, , I. Shih, Z. Mi, “Tunable, full-color nanowire light emitting diode arrays monolithically integrated on Si and sapphire”, SPIE OPTO, 97481S-97481S-9

  4. K. Q. Le, J. Bai, H. P. T. Nguyen, “Fano-induced spontaneous emission enhancement of molecule placed in a cluster of asymmetrically-arranged metallic nanoparticles”, Journal of Luminescence, 173 (2016) 199

 

2015

  1. S. Zhao, , M. G. Kibria, and Z. Mi, "III-nitride nanowire Optoelectronics", Progress in Quantum Electronics, 44 (2015) 14

  2. S. Sadaf, Y. Ra, , M. Djavid, and Z. Mi, "Alternating-current InGaN/GaN tunnel junction nanowire white-light emitting diodes",

  3. S. Woo, M. Bugnet, , Z. Mi, A. G. Botton, “Atomic Ordering in InGaN alloys within Nanowire Heterostructures”, , 15 (2015) 6413

  4. S. Woo, N. Gauquelin, , Z. Mi, and G. A. Botton,"Interplay of Strain and Indium Incorporation in InGaN/GaN Dot-in-a-Wire Nanostructures by Scanning Transmission Electron Microscopy", 24 (2015) 344002

  5. Invited: , and Y. Evo, “Phosphor-Free III-Nitride Nanowire White Light Emitting Diodes: Challenges and Prospects”, ECS Transactions  66 (2015) 213

  6. H. P. T. Nguyen, M. Djavid, X. Liu, Q. Wang, and Z. Mi, “High-power phosphor-free InGaN/AlGaN dot-in-a-wire core-shell white light-emitting diodes”, Proc. SPIE 9383 (2015) 9383007

  7. G. Sun, R. Chen, Y. Ding, , and Z. Mi, "InGaN/GaN dot-in-a-wire: Ultimate terahertz nanoemitters", 9 (2015) 105

  8. H. P. T. Nguyen, M. Djavid, S. Woo, X. Liu, A. T. Connie, S. Sadaf, Q. Wang, G. Botton, I. Shih, and Z. Mi, “Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers”, Nature Scientific Reports 5 (2015) 7744

  9. K. H. Li, Q. Wang, , S. Zhao, and Z. Mi, “Polarization-resolved electroluminescence study of InGaN/GaN dot-in-a-wire light-emitting diodes grown by molecular beam epitaxy”, doi: 10.1002/pssa.201431726

 

2014

  1. R. Wang, , A. T. Connie, I. Shih, and Z. Mi, "Color-Tunable, Phosphor-Free InGaN Nanowire Light-Emitting Diode Arrays Monolithically Integrated on Silicon", Optics Express 22 (2014) A1768

  2. A. F. Jason, , Z. Mi; R. Leonelli, L. Stafford, "Improvement of the emission properties from InGaN/GaN dot-in-a-wire nanostructures after treatment in the flowing afterglow of a microwave N2 plasma", 25 (2014) 435606

  3. Q. Wang, X. Liu, M. G. Kibria, , S. Zhao, K. H. Li, Z. Mi, "P-type dopant incorporation and surface charge properties of catalyst-free GaN nanowires revealed micro-Raman scattering and X-ray photoelectron spectrocopy", 6 (2014) 9970

  4. M. Djavid, S. Zhang, K. Cui, S. Fan, and Z. Mi, "Tunnel injection InGaN/GaN dot-in-a-wire white-light emitting diodes", Semiconductor Science and Technology 29 (2014) 085009

  5. S. Zhang, A. T. Connie, D. A. Laleyan, , Q. Wang, J. Song, I. Shih, and Z. Mi, "On the carrier injection efficiency and thermal properties of InGaN/GaN axial nanowire light emitting diodes",

  6. M. G. Kibria, S. Zhao, F. A. Chowdhury, Q. Wang, , M. L. Trudeau, H. Guo, and Z. Mi, "Ultrahigh efficiency spontaneous overall water splitting on p-type GaN nanowires", Nature Communications 5 (2014) 3825. (IF=11.474)

  7. Z. Mi, , M. Djavid, S. Zhang, A. T. Connie, S. M. Sadaf, Q. Wang, S. Zhao, and I. Shih, " i

  8. Z. Mi, , S. Zhang, A. T. Connie, Md. G. Kibria, Q. Wang, and I. Shih, "Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light emitting diodes", SPIE Proceeding 9003 (2014) 900306.

  9. A. T. Connie, , S. M. Sadaf, I. Shih, and Z. Mi, " Engineering the color rendering index of phosphor-free InGaN/(Al)GaN nanowire white light emitting diodes grown by molecular beam epitaxy", 32 (2014) 02C113.

  10. H. P. T. Nguyen, Q. Wang, and Z. Mi, “Phosphor-free InGaN/GaN dot-in-a-wire white light emitting diodes on Cu substrates”, Journal of Electronic Materials 43 (2014) 868.

 

2013

  1. Y. Kamali, B. R. Walsh, J. Mooney, , C. Brosseau, R. Leonelli, Z. Mi, and P. Kambhampat, " Spectral and spatial contributions to white light generation from InGaN/GaN dot-in-a-wire nanostructures", Journal of Applied Physics 114 (2013) 164305.

  2. H. P. T. Nguyen, S. Zhang, A. Connie, Md. Kibria, Q. Wang, I. Shih, and Z. Mi, “Breaking the carrier injection bottleneck of phosphor-free nanowire white light emitting diodes”,  Nano Letter 13 (2013) 5437.

  3. M. G. Kibria, , K. Cui, S. Zhao, D. Liu, H. Guo, M. L. Trudeau, S. Paradis, H. Abou-Rachid, and Z. Mi, “One-step overall water splitting under visible light using multi-band InGaN/GaN nanowire heterostructures”, 7 (2013) 7886.

  4. B. AlOtaibi, S. Zhao, M. G. Kibria, S. Fan, and Z. Mi, "Highly Stable Photoelectrochemical Water Splitting and Hydrogen Generation Using a Double-Band InGaN/GaN Core/Shell Nanowire Photoanode", 13 (2013) 4356.

  5. S. Zhang, Y. Li, S. Fathololoumi, , Q. Wang, Z. Mi, Q. Li, and G. T. Wang, " On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping", 3 (2013) 082103.

  6. Q. Wang, A. Connie, , M. G. Kibria, S. Zhao, S. Sadaf, and Z. Mi, “High efficiency, spectrally pure 340 nm ultraviolet emission from AlxGa1-xN nanowire based light emitting diodes”, 24 (2013) 345201.

  7. S. Zhao, M. G. Kibria, Q. Wang, , and Z. Mi, “Growth of large-scale vertically aligned GaN nanowire heterostructures with high uniformity on SiOx by catalyst-free molecular beam epitaxy”, 5 (2013) 5283.

  8. H. P. T. Nguyen, M. Dajvid, and Z. Mi, “Nonradiative recombination mechanism in phosphor-free GaN-based nanowire white light emitting diodes and the effect of ammonium sulfide surface passivation”, ECS Transaction 53 (2013) 93

  9. B. AlOtaibi, M. Harati, S. Fan, S. Zhao, , M. G. Kibria, and Z. Mi, “High efficiency photoelectrochemical water splitting and hydrogen generation using GaN nanowire photoelectrode”, (2013) 175401.

  10. Z. Mi, , S. Zhang, K. Cui, and M. Djavid, “Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures: toward ultra-high efficiency phosphor-free white light emitting diodes”, , 8634 (2013) 86340B

  11. J. Titus, , Z. Mi, and A. G. U. Perera, “Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy”, , 102 (2013) 121901.

  12. V. Cardin, L. I. Dion-Bertrand, P. Gregoire, , M. Sakowicz, Z. Mi, C. Silva and R. Leonelli, “Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111)”, , 24 (2013) 045702.

 

2012

  1. A. Shih, S. Fathololoumi, S. Zhao, B. L. Huy, , I. Shih, Z. Mi, "Negative differential resistance in GaN/AlN heterostructure nanowires ",

  2. Q. Wang, , K. Cui, and Z. Mi, "High efficiency ultraviolet emission from AlxGa1-xN core-shell nanowire heterostructures grown on Si(111) by molecular beam epitaxy", , 101 (2012) 043115.

  3. H. P. T. Nguyen, K. Cui, S. Zhang, M. Djavid and Z. Mi, "Controlling electron overflow in phosphor-free InGaN/GaN nanowire white-light-emitting diodes", Nano Letters, 12 (2012) 1317.

  4. H. P. T. Nguyen, M. Djavid, Kai Cui and Z. Mi, " Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon", Nanotechnology, 23 (2012) 194012.

  5. H. P. T. Nguyen, S. Zhang, K. Cui and Z. Mi, "High efficiency InGaN/GaN dot-in-a-wire red light emitting diodes", IEEE Photonics Technology Letters, 24 (2012) 321.

 

2011

  1. S. Fathololoumi, , and Z. Mi, "Self-organized In(Ga)N nanowire heterostructures and optoelectronic device applications", , 2 (2011) 123

  2. H. P. T. Nguyen, K. Cui , S. Zhang, Saeed Fathololoumi and Z. Mi, "Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon", Nanotechnology, 22 (2011) 445202.

  3. H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, S. Fathololoumi, M. Couillard, G. A. Botton, and Z. Mi, "p-type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111)", Nano Letters, 11 (2011) 1919.

  4. H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, and Z. Mi, "Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN dot-in-a-wire white light emitting diodes on Si(111)", ECS Transactions, 35 (2011) 41

  5. H. P. T. Nguyen, Y.-L Chang, I. Shih and Z. Mi, "InN p-i-n nanowire solar cells on Si", IEEE Journal of Selected Topics in Quantum Electronics: Nanowires, 17 (2011) 1062.

 

2010

  1. Z. Mi, , K. Cui, X. Han, S. Zhang, and Y.-L. Chang, "Prospects and challenges of InN-based nanowire heterostructures and devices integrated on Si", 7847, 784702 (2010)

​

2009

  1. H. P. T. Nguyen , K. H. Kim, H. Lim, and J. J. Lee, "Characteristics of high efficiency InGaP∕InGaAs double junction solar cells grown on GaAs substrates, AIP Conf. Proc., 1169 (2009) 149

  2. E. S. Choi, H. M. Doan, , S. Kim, H. Lim, F. Rotermund, and J. J. Lee, "Cathode-luminescence study of photonic crystal green InxGa1-xN/InyGa1-yN light emitting diodes", 311 (2009) 863.

Conferences

  1. (Invited) ,” III-Nitride Nanostructures for High Efficiency Ultraviolet Light-Emitters”, IEEE Research and Applications of Photonics in Defense, Mirama Beach, Florida, United States, September 11-13, 2023

  2. (Invited) “Full-Color Micro Light-Emitting Diodes Using Group III-Nitride Nanowires”, 25th Photonics North Conference, Montreal, Quebec, Canada, June 12-15, 2023

  3. M. B. S. Muthu, R. T. Velpula, B. Jain, and H. P. T. Nguyen, “Investigation of Performance Improvements in AlGaN Deep Ultraviolet Light-Emitting Diodes using Lens-Shaped Quantum Barriers”, 25th Photonics North Conference, Montreal, Quebec, Canada, June 12-15, 2023

  4. G. Purnachandra Rao, , and , “Performance Analysis of Gate Engineered III-Nitride/β-Ga2O3 Nano-HEMT for High-Power Nanoelectronics," , Monterey, California, USA, May 21 - 25, 2023.

  5. R. Paul, S. Shukla, T. R. Lenka. F. A. Talukdar, Nour El. I. Boukortt, , “,” , 7-8 Apr 2023, Kalyani, India.

  6. (Invited) R. T. Velpula, B. Jain, M. Patel, and A. Marangon, “Engineering the light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes with surface passivation and photonic crystal structures”, The 2023 SPIE Photonics West, San Francisco, California, United States, 28 January - 2 February 2023

  7. R. T. Velpula, B. Jain, and “Mitigating positive sheet polarization in high efficiency InGaN blue light-emitting diodes”, , San Francisco, California, United States, 28 January - 2 February 2023

  8. B. Jain, R. T. Velpula, and “Advantages of concave quantum barriers in AlGaN deep ultraviolet light-emitting diodes”, , San Francisco, California, United States, 28 January - 2 February 2023

  9. S. Das, , T. R. Lenka, Fazal A. Talukdar, Giovanni Crupi, , “Design and Performance Analysis of Electron Blocking Layer free GaN/AlInN/GaN Nanowire Deep-Ultraviolet LED,” 11-14 Dec 2022, Bangalore, India.

  10. G. Purnachandra Rao, Nistha Baruah, T. R. Lenka, Rajan Singh, Sharif Md. Sadaf, and , “” 11-14 Dec 2022, Bangalore, India.

  11. R. Singh, N. E. Boukortt, G. P. Rao, T. R. Lenka, and , “The Effect of Back-Barrier on the Performance Enhancement of III-Nitride/β-Ga2O3 Nano-HEMT”, The 2nd IEEE Electron Device Kolkata Conference 2022 (EDKCON 2022), Kolkata, India, November 26-27, 2022

  12. : H. P. T. Nguyen, R. T. Velpula, and B. Jain, “Enhanced Efficiency of AlInN Nanowire Ultraviolet Light-Emitting Diodes using Photonic Crystal Structures”, The 242th Electrochemical Society Meeting, Atlanta, Georgia, October 9-13, 2022

  13. : H. P. T. Nguyen, R. T. Velpula, and B. Jain, “InGaN/AlGaN Red-Emitting Nanowire LEDs for Monolithic Micro-LED Displays”, The 242th Electrochemical Society Meeting, Atlanta, Georgia, October 9-13, 2022

  14. G. Purnachandra Rao, T. R. Lenka, Nour El. I. Boukortt, and G. Crupi, , 10-11 Dec, 2022, Kolkata

  15. S. Das, T. R. Lenka, F. Talukdar, R. T. Velpula, , and G. Crupi, “

  16. Distinguished Lecture: H. P. T. Nguyen, “III-nitride Nanowire Ultraviloet Light-Emitting Diodes”, IEEE EDS Summer School on Recent Trends in Micro/Nanoelectronic Devices, Virtual, August 20-24, 2022

  17.  

    S. Das, T. R. Lenka, F. Talukdar, R. T. Velpula, and G. Crupti,Simulation Modelling of High-Efficiency AlGaN/GaN Multi-Quantum Well UV-LED with Double-Sided Graded Staircase EBL for Enhanced Light Technology”,

    17-19 July 2022

  18. R. T. Velpula, B. Jain, and , “Study on the Quantum Efficiency Enhancement in AlInN Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy”, Compound Semiconductor Week, Ann Arbor, Michigan, June 01-03, 2022

  19. R. T. Velpula, B. Jain, F. M. Shakiba, and , “Advantages of Distributed p-Type Electron Blocking Layers in InGaN Blue Light-Emitting Diodes”, 242th Electrochemical Society Meeting, Vancouver, Canada, May 29 – June 02, 2022

  20. : H. P. T. Nguyen, “III-Nitride Nanowire Light-Emitting Diodes: Materials, Device Fabrication, and Applications”, IEEE EDS Napal Chapter, March 23, 2022

  21. P. Raut, U. Nanda, D. K. Panda, and H. P. T. Nguyen, “Performance Analysis of Double Gate Junctionless TFET with respect to different high-k materials and oxide thickness, 2nd International Conference on Artificial Intelligence and Signal Processing (AISP), Vijayawada, India, February 12-14, 2022

  22. Invited: R. T. Velpula, B. Jain, D. Das, T. R. Lenka, and H. P. T. Nguyen, “Advatanges of Polarization Engineered Quantum Barriers in III-Nitride Ultraviolet Light-Emitting Diodes: An Electron-Blocking Layer Free Approach”, 2nd IEEE International Conference on Micro/Nanoelectronics Devices, Circuits and Systems (MNDCS), 29th January 2022

  23. S. Das, T. R. Lenka, F. A. Talukdar, R. T. Velpula, B. Jain, and , "Performance Enhancement of AlInGaN Quantum Well based UV-LED," in 19-21 Dec. 2021

  24. S. Das, T. R. Lenka, F. A. Talukdar, R. T. Velpula, B. Jain, H. P. T. Nguyen, and G. Crupi, "Effects of Spontaneous Polarization on Luminous Power of GaN/AlGaN Multiple Quantum Well UV-LEDs for Light Technology," in 15th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS), 20-22 Oct. 2021 

  25. H. P. T. Nguyen, R. T. Velpula, and B. Jain. “Molecular Beam Epitaxial Growth of High Efficiency AlInN Nanowire Ultraviolet Light-Emitting Diodes”, SPIE Optics and Photonics Conference, San Diego, California, August 1-5, 2021

  26. : H. P. T. Nguyen, “High Efficiency AlInN Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy”, IEEE 2021 Latin American Electron Devices Conference (Virtual), April 19 – 21, 2021

  27. R. T. Velpula, B. Jain, H. Q. T. Bui, and , “Phosphor-Free InGaN/AlGaN Nanowire Red Micro-Light-Emitting Diodes for Display Applications”, SPIE Photonics West, Digital Forum, March 6-11, 2021

  28. B. Jain, R. T. Velpula, H. Q. T. Bui, and , “Controlling Electron Overflow in InGaN/GaN Nanowire White Light-Emitting Diodes Without Electron Blocking Layer”, SPIE Photonics West, Digital Forum, March 6-11, 2021

  29. : H. P. T. Nguyen, “Phosphor-Free III-Nitride Nanowire Light-Emitting Diodes: Challenges, Approaches, and Opportunities”, International Conference on Micro/Nanoelectronics Devices, Circuits and Systems, Silchar, India, January 30-31, 2021

  30. : R. T. Velpula, B. Jain, T. R. Lenka, and H. P. T. Nguyen, “InGaN/GaN Nanowire White Color Light-Emitting Diodes without Electron Blocking Layer”, International Conference on Micro/Nanoelectronics Devices, Circuits and Systems, Silchar, India, January 30-31, 2021

  31. R. Singh, T. R. Lenka, S. A. Ahsaan, and H. P. T. Nguyen, “Analytical Study of Conduction Band Discontinuity supported 2DEG Density in AlN/Ga2O3 HEMT”, International Conference on Micro/Nanoelectronics Devices, Circuits and Systems, Silchar, India, January 30-31, 2021

  32. B. Jain, R. T. Velpula, H. Q. T. Bui, M, Patel, and , “Electron Blocking Layer Free Full-Color InGaN/GaN White Light-Emitting Diodes”, Honolulu, HI, October 4-9, 2020

  33. R. T. Velpula, B. Jain, H. Q. T. Bui, and , “Ultraviolet Light-Emitting Diodes using Aluminium Indium Nitride Nanowire Structures”, Honolulu, HI, October 4-9, 2020

  34. H. Q. T. Bui, R. T. Velpula, B. Jain, and III-Nitride Based Narrow Band Far-UVC LEDs for Airborne and Surface Disinfection”, ECS PRiME (Virtual), Honolulu, HI, October 4-9, 2020

  35. Invited: H. P. T. Nguyen, “III-Nitride Nanowire Light-Emitting Diodes on Si and Patterned Substrates for Display/AR/VR Applications”, OSRAM Opto Semiconductors, August 13, 2020

  36. Invited: H. P. T. Nguyen, “III-Nitride based Nanowire LEDs for micro-display applications”, Goolge LLC, June 14, 2020

  37. Invited: H. P. T. Nguyen, “III-Nitride Nanowire Light-Emitting Diodes on Si and Patterned Substrates”, King Abdullah University of Science and Technology, co-hosted by the Western Saudi Arabia Chapter of IEEE Electron Device Society, May 29, 2020

  38. R. T. Velpula, B. Jain, H. Q. T. Bui, and , “Electron Blocking Layer Free AlGaN Deep-Ultraviolet Light Emitting Diodes”, 2020 CLEO Laser Science to Photonic Applications, San Jose McEnery Convention Center San Jose, California (Virtual, Web Conference), May 11-15, 2020

  39. H. Q. T. Bui, B. Jain, R. T. Velpula, H. Q. T. Bui, and , “Full-Color MicroLEDs for Display Technologies”, 2020 CLEO Laser Science to Photonic Applications, San Jose McEnery Convention Center San Jose, California (Virtual, Web Conference), May 11-15, 2020

  40. B. Jain, R. T. Velpula, H. Q. T. Bui, and , “Electron Blocking Layer Free AlGaN Deep-Ultraviolet Light Emitting Diodes”, 2020 CLEO Laser Science to Photonic Applications, San Jose McEnery Convention Center San Jose, California (Virtual, Web Conference), May 11-15, 2020

  41. D. K. Panda, R. Singh, T. R. Lenka, R. T. Velpula, H. Q. T. Bui, and , “Modeling of DC and RF Characteristics of Single and Double Gate AlGaN/GaN MOS-HEMTs”, 14th IEEE Nanotechnology Materials and Devices Conference, Stockholm, Sweden, October 27-30, 2019.

  42. D. K. Panda, R. Singh, T. R. Lenka, R. T. Velpula, H. Q. T. Bui, and H. P. T. Nguyen, “Modeling of  AlGaN/GaN HEMT as Biosensor for Detection of Breast Cancer”, 14th IEEE Nanotechnology Materials and Devices Conference, Stockholm, Sweden, October 27-30, 2019.

  43. R. Singh, T. R. Lenka, R. T. Velpula, H. Q. T. Bui, and H. P. T. Nguyen, “Investigation of E-Mode Beta-Gallium Oxide MOSFET for Emerging Nanoelectronics”, 14th IEEE Nanotechnology Materials and Devices Conference, Stockholm, Sweden, October 27-30, 2019.

  44. R. T. Velpula, B. Jain, H. Q. T. Bui, O. H. Aref, T. R. Lenka, and H. P. T. Nguyen, “High Efficiency Ultraviolet Emission from Molecular Beam Epitaxial Growth of AlInN/GaN Nanowires”, 14th IEEE Nanotechnology Materials and Devices Conference, Stockholm, Sweden, October 27-30, 2019.

  45. B. Jain, R. T. Velpula, H. Q. T. Bui, O. H. Aref, T. R. Lenka, and H. P. T. Nguyen, “Comparative Study of AlInN and AlGaN Nanowire Deep Ultraviolet Light-Emitting Diodes”, 14th IEEE Nanotechnology Materials and Devices Conference, Stockholm, Sweden, October 27-30, 2019.

  46. Invited: , “III-Nitride Nanostructures Grown by Molecular Beam Epitaxy: Materials, Device Fabrication, and Applications”, Mechanical and Industrial Engineering Department, NJIT, October 9, 2019

  47. Invited: , “Phosphor-Free Nanowire Light-Emitting Diode Arrays on Si and Patterned Substrates”, Vietnam National University – Ho Chi Minh City, Vietnam, August 20, 2019

  48. Invited: , “Full-Color and Phosphor-Free White Light-Emitting Diode Arrays on Si and Flexible Substrates”, Ton Duc Thang University, Vietnam, August 15, 2020

  49. H. P. T. Nguyen, “Using Smart-LED in developing high quality and durable seedlings”, Vietnam Innovation Network, August 21-26, 2018, Ha Noi, Vietnam

  50. M. Rajan Philip, T. H. Q. Bui, M. Djavid, Md. N. Bhuyian, P. Vu, and ,Phosphor-free III-nitride nanowire white-light-emitting diodes for visible light communication”, , March 3-7, 2018, Denver, Colorado

  51. T. H. Q. Bui, M. Rajan Philip, M. Djavid, , “Full-Color Phosphor-Free InGaN/AlGaN Nanowire Light-Emitting Diodes Grown By Molecular Beam Epitaxy”, , November 3–5, 2017; Newark, New Jersey

  52. M. Rajan Philip, T. H. Q. Bui, M. Djavid, , Phosphor-free InGaN/AlGaN white-light-emitting diodes on flexible substrates.”, , November 3–5, 2017; Newark, New Jersey

  53. M. Rajan Philip, D. D. Choudhary, M. Djavid, Md. N. Bhuyian, and , “AlGaN/GaN -- Grown by Molecular Beam Epitaxy”, , October 15-18, 2017,Galveston

  54. H.-D. Nguyen, , “III-Nitride Nanostructures for Applications in Green Energy”, , September 27-30, 2017, Ha Noi, Vietnam

  55. Invited: , “III-Nitride Nanowire Lighting Emitting Diodes on Flexible Platform”,

  56. Invited Plenary: H. P. T. Nguyen, S. Zhao, J. Piao, and Z. Mi, “III-Nitride Nanowire LEDs and Lasers: The Next Generation Lighting Technology”, 13th China International Forum on Solid State Lighting, November 15-17, 2016, Beijing, China

  57. M. R. Philip, D. D. Choudhary, M. Djavid, M. N. Bhuyian, J. Piao, and , “Controlling Color Emission of InGaN/AlGaN Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy”,

  58. Steffi Y Woo, Mathieu Kociak, Hieu P T Nguyen, Zetian Mi, Gianluigi A Botton, “Correlative Nanoscale Luminescence and Elemental Mapping in InGaN/(Al)GaN Dot-in-a-wire Heterostructures”, The 16th European Microscopy Congress 2016, August 28 - September 2, 2016 in Lyon, France

  59. Hieu P. T. Nguyen, Moab R. Philip, Dipayan D. Choudhary, Mehrdad Djavid, and J. Piao, “Photoelectrochemical hydrogen generation using multi-band III-nitride nanowire arrays”, Water Energy Nexus, 252nd American Chemical Society National Meeting and Exposition, Philadelphia, PA August 21-25, 2016

  60. H. P. T. Nguyen, “III-Nitride Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy”, OSA Technical Group Webinar, July 27 2016

  61. R. Wang, Y. Ra, S. Zhao, X. Liu, , I. Shih, and Z. Mi, "Tunable, full-color nanowire light-emitting diode arrays monolithically integrated on Si and sapphire",SPIE Photonics West 2015, San Francisco, CA, February, 2016

  62. Sharif M. Sadaf, Yong-Ho Ra, Hieu P. Nguyen and Zetian Mi, 2015 MRS Fall Meeting& Exhibit, Boston, Massachusetts, November 29 – December 4, 2015

  63. H. P. T Nguyen, M. N. Bhuyian, A. Diop, Y. Evo, R. Rocha, and J. Piao, "Self-organized InGaN/AlGaN superlattice core-shell heterostructures for high power phosphor-free nanowire white light-emitting diodes", the 5th international workshop on nanotechnology and application, Vung Tau, Vietnam, November 11-14, 2015

  64. H. P. T. Nguyen”III-nitride Nanowire Light-Emitting Diodes”,  Joint Workshop on LEDs for Life Science and Bio-Agriculture 2015, Ho Chi Minh City, Vietnam November 10-11, 2015

  65. R. Wang, Y. Ra, S. Zhao, X. Liu, , I. Shih, and Z. Mi, "Tunable, full-color nanowire light-emitting diode arrays on Si and sapphire", International Conference on Nitride Semiconductors, Beijing, China, August 30th - September 4th, 2015

  66. : H. P. T. Nguyen, Y. Evo, “Phosphor-Free III-Nitride Nanowire White Light Emitting Diodes: Challenges and Prospects”, 227th Electrochemical Society Meeting, Chicago, Illinois, May 24-28, 2015

  67. Ruolin Chen, Guan Sun, Yujie J. Ding, Hieu Nguyen, and Zetian Mi, “Photoluminescence Upconversion Study of GaN Nanowires: Potential for Optical Refrigeration”,CLEO 2015

  68. S. Sadaf, Y-H. Ra, , J. Kang, M. Djavid, and Z. Mi, "InGaN/GaN tunnel junction dot-in-a-wire light-emitting diodes", 2015 MRS Spring Meeting& Exhibit, San Francisco, California, April 6-10, 2015

  69. H. P. T. Nguyen, “Molecular Beam Epitaxial Growth of Large Area InGaN/GaN Nanowire Solar Cells on Silicon Substrates”, 1st Annual World Congress of Smart Materials, Busan, South Korea, March 23-25, 2015

  70. H. P. T. Nguyen, M. Djavid, X. Liu, Q. Wang, and Z. Mi, “High-power phosphor-free InGaN/AlGaN dot-in-a-wire core-shell white light-emitting diodes”, SPIE Photonics West 2014, San Francisco, California, February 7-12, 2015

  71. Zetian Mi, S. Zhao, H. P. T. Nguyen,B. Le, Q. Wang, and X. Liu, “High Performance III-Nitride Nanowire Light Emitting Diodes from the Deep Ultraviolet to the Near Infrared”, 10th International Symposium on Semiconductors Light Emitting Diodes, Kaohsiung, Taiwan, December 14-19, 2014

  72. R. Cheriton, S. Han, A. Trojnar, A. Connie, , Z. Mi, J. J. Krich, K. Hinzer, “Electrical and Optical Characterization of Core-Shell InGaN/GaN Nanowire Solar Cells on Si (111)”, EU PVSEC 2014, Amsterdam, Netherland, September 22-26, 2014

  73. S. Y. Woo, N. Gauquelin, M. Kociak, , Z. Mi, G. A. Botton, “Influence of Strain State on the Formation of Short-Period InGaN/GaN Nanowire Superlattice by Electron Energy-Loss Spectroscopy”, 18th International Microscopy Congress, Prague, Czech Republic, September 7-12, 2014

  74. S. Y. Woo, M. Kociak, , Z. Mi, G. A. Botton, “Nanoscale Luminescence Mapping of InGaN/GaN Multiple Quantum Dot Doped Nanowire LEDs with Scanning Transmission Electron Microscopy”, 18th International Microscopy Congress, Prague, Czech Republic, September 7-12, 2014

  75. G. A. Botton, M. Bugnet, K.J. Dudeck, N. Gauquelin, H. Liu, S. Prabhudev, A. Scullion, S. Stambula, S.Y. Woo, G.-Z. Zhu, H. P. T. Nguyen, Z. Mi, “Studying Tomorrow’s Materials Today: Insights with Quantitative STEM, EELS”, 2014 Microscopy and Microanalysis, Hartford, Connecticut, August 3-7, 2014

  76. B. AlOtaibi, S. Fan, , S. Zhao, M. G. Kibria, and Z. Mi, " PhotoelectrochemicalWater Splitting and Hydrogen Generation Using InGaN/GaN Nanowire Arrays", 2014 IEEE Summer Topical Meeting Series, Montreal, Quebec, Canada, July 14-16, 2014

  77. M. G. Kibria, F. A. Chowdhury, , S. Zhao, Z. Mi, " Overall Water Splitting under Broadband Light Using InGaN/GaN Nanowire Heterostructures", 2014 IEEE Summer Topical Meeting Series, Montreal, Quebec, Canada, July 14-16, 2014

  78. S. Zhao, , and Z. Mi, "2014 IEEE Summer Topical Meeting Series, Montreal, Quebec, Canada, July 14-16, 2014

  79.  H. P. T. Nguyen, R. Wang, A. T. Connie, I. Shih, and Z. Mi, " Color Tunable Phosphor-Free InGaN/GaN/AlGaN Core-Shell Nanowire Light-Emitting Diodes on Silicon",  2014 IEEE Summer Topical Meeting Series, Montreal, Quebec, Canada, July 14-16, 2014

  80. A. T. Connie, , I. Shih, and Z. Mi, “Investigating the Surface State Effect on Nanowire Solar Cell”, Next Generation Solar, Montreal, Quebec, May 14-16, 2014

  81. Z. Mi, H. P. T. Nguyen, M. Djavid, S. Zhang, A. T. Connie, S. M. Sadaf, Q. Wang, S. Zhao, and I. Shih, "High Power Phosphor-Free InGaN/GaN/AlGaN Core-Shell Nanowire White Light Emitting Diodes on Si", 225th Electrochemical Society Meeting, Orlando, Florida, May 11-15, 2014

  82. Z. Mi, H. P. T. Nguyen, S. Zhang, A. T. Connie, Md. G. Kibria, Q. Wang, and I. Shih, "Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light emitting diodes", SPIE Photonics West 2014, San Francisco, California, February 1-6, 2014

  83. H. P. T. Nguyen, M. G. Kibria,, A. Connie, Q. Wang, I. Shih, and Z. Mi, " High-power Phosphor-free InGaN/GaN/AlGaN Dotin-a-wire Core-shell White Light Emitting Diodes", 30th North American Molecular Beam Epitaxy Conference, Banff, Alberta, October 5-11, 2013

  84. A.T. Connie, , S.M. Sadaf, I. Shih, and Z. Mi, " Engineering the Color Rendering Index of Phosphor-free InGaN/(Al)GaN Nanowire White Light Emitting Diodes Grown by Molecular Beam Epitaxy", 30th North American Molecular Beam Epitaxy Conference, Banff, Alberta, October 5-11, 2013

  85. B. H. Le, N. H. Tran, , and Z. Mi, " InGaN/GaN Dot-in-a-wire Intermediate-band Solar Cell Devices",  30th North American Molecular Beam Epitaxy Conference, Banff, Alberta, October 5-11, 2013

  86. M.G. Kibria, F.A. Chowdhury, S. Zhao, , Q. Wang, and Z. Mi, "Band-engineered InGaN Nanowires Arrays for HighEfficiency Water Splitting Under Visible Light Irradiation", 30th North American Molecular Beam Epitaxy Conference, Banff, Alberta, October 5-11, 2013

  87. Z. Mi, and H. P. T. Nguyen, “High-efficiency phosphor-free InGaN/GaN nanowire white light-emitting diodes,” Materials and Symposium for Efficient Lighting Symposium at the 246th National Meeting of the American Chemical Society, Indianapolis, IN, Sept. 8-13, 2013.

  88. Z. Mi, H. P. T. Nguyen, S. Zhao, Q. Wang, B. H. Le, and K. H. Li, “High performance III-nitride nanowire LEDs and lasers on Si,” The 16th Canadian Semiconductor Science and Technology Conference, Thunder Bay, ON, Canada, Aug. 12-16, 2013.

  89. B. H. Le, N. H. Tran, S. Arafin, , and Z. Mi, "Current-voltage characteristics of single InGaN/GaN nanowire LEDs",, Washington, DC August 25-30, 2013.

  90. H. P. T. Nguyen, Q. Wang, and Z. Mi, "Phosphor-free InGaN/GaN dot-in-a-wire white light emitting diodes on Cu substrates", 55th Electronic Materials Conference, South Bend, Indiana, June 26-28, 2013

  91. S. M. Sadaf, , A. Connie, and Z. Mi, "Polarization doped core-shell InGaN-GaN dot-in-a wire white light emitting diodes", Indiana, June 26-

  92. Z. Mi, S. Zhao, H. P. T. Nguyen, Q. Wang, and M. Djavid, " Ultrahigh Efficiency In(Ga)N Nanowire LEDs and Lasers on a Si Platform", 15th Photonics North Conference, Ottawa, Canada, June 03-05, 2013

  93. H. P. T. Nguyen, M. Djavid, and Z. Mi, " Nonradiative Recombination Mechanism in Phosphor-Free GaN-Based Nanowire White Light Emitting Diodes and the Effect of Ammonium Sulfide Surface Passivation", 223th Electrochemical Society Meeting, Toronto, Ontario, Canada, May 12-16, 2013

  94. H. P. T. Nguyen, H.-D. Nguyen, S. Mho, and J. J. Lee," Implanted Nano-hole Arrays for the Enhanced Efficiency of III-V Based Solar Cells and Light Emitting Diodes" 223th Electrochemical Society Meeting, Toronto, Ontario, Canada, May 12-16, 2013

  95. Z. Mi, H. P. T. Nguyen, S. Zhang, K. Cui, and M. Djavid, “Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures: toward ultra-high efficiency phosphor-free white light emitting diodes”, SPIE Photonics West 2013, San Francisco, California, February 2-7, 2013

  96. M. Harati, B. M. Alotaib, M. G. Kibria, S. Fan, S. Zhao, , and Z. Mi, "n-InGaN Nanowire Arrays for Photoelctrochemical Hydrogen Generation", Material Research Society Fall 2012, Hynes Convention Center, Boston, MA, November 25 - 30, 2012

  97. S.  Y.  Woo, S. Turner, N.  Gauquelin, , Z. Mi, G. A.  Botton, “Effect of Strain Distribution on Indium Incorporation in InGaN/GaN Dot-in-a-wire Nanostructures by Electron Energy-loss Spectroscopy”, Material Research Society Fall 2012, Hynes Convention Center, Boston, MA, November 25 - 30, 2012

  98. M.G. Kibria, , S. Zhao, and Z. Mi, "Photocatalytic Pure Water Splitting Under Visible Light Using InGaN/GaN Nanowire Heterostructures Grown By Molecular Beam Epitaxy", , Stone Mountain Park, Georgia, October 14-17, 2012

  99. Z. Mi, H. P. T. Nguyen, S. Zhang, and M. Djavid, "Ultrahigh Efficiency Phosphor-Free InGaN/GaN Nanowire White Light Emitting Diodes on Silicon", IEEE Photonics Conference (IPC12), Burlingame, California, September 23-27, 2012 

  100. B. AlOtaibi, M. Harati, Md. G. Kibria, S. Fan, , S. Zhao, and Z. Mi, "Photoelectrochemical Hydrogen Production Using GaN Nanowire Arrays", , Montreal, Quebec, Canada, June 6-8, 2012

  101. H. P. T. Nguyen, Y. Li, K. Cui, and Z. Mi, "AlGaN/GaN Nanowire Deep Ultraviolet Light Emitting Diodes Monolithically Grown on Si(111)", Photonics North 2012, Quebec, Canada, June 6-8, 2012

  102. M. Djavid, , S. Zhang, K. Cui, and Z. Mi " Reduced Electron Overflow in InGaN/GaN Dot-in-a-Wire White-Light-Emitting Diodes by Using an Electronically Coupled Quantum Well", , Montreal, Quebec, Canada, June 6-8, 2012

  103. H. P. T. Nguyen, Y. Li, I. Shih, and Z. Mi, "InGaN/GaN Nanowires for Next Generation Photovoltaics", Next Generation Solar 2012, Montreal, Quebec, Canada, May 14-15, 2012

  104. M. G. Kibria, Z. Mi, , S. Zhao, D. Liu, K. H. Bevan, H. Guo, S. Paradis, A.-R. Hakima, and M. Trudeau, "Harnessing Energy from Sunlight and Water Using III-Nitride Nanowire Arrays", Montreal, Quebec, Canada, May 14-15, 2012

  105. H. P. T. Nguyen, Y. Li, and Z. Mi, "Large Area InGaN/GaN Nanowire Solar Cells on Silicon," CLEO 2012, San Jose, CA, May 6-11, 2012

  106. S. Fathololoumi, S. Zhao, , M. Djavid, I. Shih, Z. Mi "Large Area GaN/AlN Nanowire Resonant Tunneling Devices on Silicon", CLEO 2012, San Jose, CA, May 6-11, 2012

  107. G. Sun, R. Chen, P. Zhao, , Z. Mi, and Y. Ding, " Terahertz Generation in InGaN/GaN Dot-in-a-Wire", CLEO 2012, San Jose, CA, May -1, 2012

  108. H. D. Nguyen, , J. J. Lee, and S. Mho, "Enhanced Efficiency in Single Junction GaAs Solar Cells by Nano-hole Arrays", , January 29-31, 2012

  109. H. P. T. Nguyen, K. Cui, S. Zhang, S. Fathololoumi, R. Wu, and Z. Mi, "High-efficiency phosphor-free InGaN/GaN dot-in-a-wire white-light-emitting diodes on Silicon", SPIE Photonics West 2012, San Francisco, California, Jan. 21-26, 2012

  110. H. P. T. Nguyen, S. Zhang, K. Cui, S. Fathololoumi and Z. Mi, "Study on the Quantum Efficiency Enhancement in InGaN/GaN Dot-in-a-Wire Light Emitting Diodes Grown by Molecular Beam Epitaxy", IEEE Photonics Conference (IPC11), Arlington, Virginia, October 9-13, 2011

  111. Z. Mi, H. P. T. Nguyen, K. Cui, S. Zhang, and S. Fathololoumi, "Ultrahigh-Efficiency Phosphor-Free Nanowire White Light Emitting Diodes Monolithically Grown on Silicon", Canadian Semiconductor Science and Technology Conference, Univ. of British Columbia, Vancouver, Canada, Aug. 15-17, 2011

  112. H. P. T. Nguyen, S. Zhang, K. Cui, S. Fathololoumi and Z. Mi, "High efficiency phosphor-free InGaN/GaN white light emitting diodes on Silicon", 28th North American Molecular Beam Epitaxy Conference, La Jolla, CA, August 14-17, 2011

  113. H. P. T. Nguyen, K. Cui, S. Fathololoumi, X. Han, S. Zhao, Z. Mi, Q. Li, G. Wang, K. Bevan, and H. Guo, "On the surface electron accumulation and Fermi-level pinning at InN nonpolar growth surfaces", 9th International Conference on Nitride Semiconductors, SECC, Glasgow, July 10-15, 2011

  114. H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, S. Fathololoumi, and Z. Mi," High-Efficiency p-Doped InGaN/GaN Dot-in-a-Wire White Light Emitting Diodes Monolithically Grown on Si(111)," 9th International Conference on Nitride Semiconductors, SECC, Glasgow, July 10-15, 2011

  115. H. P. T. Nguyen, K. Cui, S. Zhang, X. Han, and Z. Mi, "InGaN/GaN dot-in-a-wire nanoscale heterostructures and high-efficiency light emitting diodes on Si", 5th International Conference on Nanophotonics, Sanghai, China, May 22-26, 2011.

  116. Z. Mi, H. P. T. Nguyen, K. Cui, Md G. Kibria, D. Wang, and I. Shih, "Harvesting Solar Energy Using Group III-Nitride Nanowires", Photovoltaics Canada-2nd National Scientific Conference, Ottawa, Canada, May 16 –18, 2011

  117. H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, and Z. Mi, "High Efficiency InGaN/GaN Dot-in-a-Wire Light Emitting Diodes Grown by Molecular Beam Epitaxy on Si(111) Substrate", the Conference on Lasers and Electro-Optics 2011, Baltimore Convention Center, Baltimore, Maryland, USA, May 1-6, 2011

  118. H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, and Z. Mi, "Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN dot-in-a-wire light emitting diodes on Si(111)," 219th Electrochemical Society Meeting, Montreal, Canada, May 1-6, 2011

  119. P. Bianucci, K. Cui, and Z. Mi, "Nanoscale infrared sources for spectroscopic analysis of water content in wood fibre networks", , Montreal, Quebec, Canada, February, 2011

  120. Z. Mi, H. P. T. Nguyen, S. Zhang, and K. Cui, "High performance InGaN/GaN dot-in-a-wire light emitting diodes on Si(111)," IEEE Photonics Society Winter Topical Meeting 2011, Keystone, CO, Jan. 10-12, 2011

  121. Z. Mi, H. P. T. Nguyen, K. Cui, X. Han, S. Zhang, and Y.-L. Chang, "Prospects and challenges of InN-based nanowire heterostructures and devices integrated on Si," SPIE/COS Photonics Asia, Beijing, China, Oct. 18-20, 2010

  122. Y. L. ChangF. Li, J. Wang, , Z. Mi, "Optical and Electrical Transport Properties of Nearly Intrinsic and Si-Doped InN Nanowires", , Notre Dame, Indiana, US, June 23-25, 2010

  123. H. P. T. Nguyen, S. Park, Y. L. Chang, J. L. Wang, I. Shih, and Z. Mi, "Low Cost and High Performance In(Ga)N/CuInSe2 Heterojunction Solar Cells", Photonics North 2010 collocated with Photovoltaics Canada-1st  National Scientific Conference, Niagara Falls, ON, Canada, June 1 – 3, 2010

  124. Y. L. Chang, , I. Shih, and Z. Mi, "Vertically aligned InN p-i-n nanowire solar cells on Si", , Niagara Falls, ON, Canada, June 1 – 3, 2010

  125. H. P. T. Nguyen, K. H. Kim, H. Lim, and J. J. Lee, "Conversion efficiency enhanced by lowering bandgap energy of bottom cell in InGaP/InGaAs double junction solar cells", International Workshop on Nanotechnology and Application, VungTau, Vietnam, November 12-14, 2009

  126. H. P. T. Nguyen, K. H. Kim, H. Lim, and J. J. Lee, "Characteristics of high efficiency InGaP/InGaAs double junction solar cells grown on GaAs substrates", International Workshop on Advanced Material for New and Renewable Energy, Indonesia, June 9-11, 2009, Jakarta

  127. H. P. T. Nguyen, and J. J. Lee, "Enhancing solar cell conversion efficiency by roughening surface", 3rd Workshop for MEMS/Nanophotonics-based Sensors and Biomedical Applications, Ajou University, Korea, February 16-17, 2009

  128. E. S. Choi, , H. M. Doan, S. Kim, H. Lim, F. Rotermund, and J. J. Lee, Cathode-luminescence study of photonic crystal green InxGa1-xN/InyGa1-yN light emitting diodes", , Sendai, Japan, May 21-24, 2008

  129. H. P. T. Nguyen, H. M. Doan, and J. J. Lee, "High efficiency III-V solar cell", 2nd Workshop for MEMS/Nanophotonics-based Sensors and Biomedical Applications,  Yongin-Si, Korea, January 30-31, 2008

  130. E. S. Choi, , H. M. Doan, S. Kim, F. Rotermund, H. Lim, and J. J. Lee, "Enhanced cathode luminescence in InxGa1-xN/InyGa1-yN green light emitting diode structure using two-dimensional photonic crystal", , Vungtau, Vietnam, November 15 –17, 2007

  131. E. S. Choi, , and J. J. Lee, "Enhanced cathode luminescence using a photonic crystal in InGaN/GaN green LED structure",, Suwon, Korea, February 1-2, 2007

RESEARCH WORKS FEATURED IN MAGAZINE / NEWSPAPERS

1. Researchers Make Electron Blocking Layer-Free Nanowire LEDs, Compound Semconductor, Tuesday 10th March 2020

2. First Axial AlInN UV Core-shell Nanowire LEDS On Silicon, Compound Semconductor, Monday 17th August 2020

3. Zinc oxide-graphene solar cells could provide new opportunities, Brightsurf.com, May 25, 2018

https://www.brightsurf.com/news/article/052518457561/zinc-oxide-graphene-solar-cells-could-provide-new-opportunities.html

4. Full-Color InGaN/AlGaN Nanowire LEDs for Solid-State Lighting and Display, LED Professional, March 2018 Issue 66, page 50

5. Researchers Create Phosphor-Free LEDs that Emit Light Across the Visible Spectrum, Beneath the AVS Surface, May 01 2017, http://campaign.r20.constantcontact.com/render?m=1101176060676&ca=d082d4b3-eae4-4e59-aef3-e632b84d314f

6. Novel nanowire structures lead to white-light and AC-operated LEDs, Nanowerk, October 15, 2015, http://www.nanowerk.com/spotlight/spotid=41609.php

7. A Breakthrough LED Technology Manipulates Atoms to Produce White Light Efficiently

Innovation at NJIT, February 26, 2015, http://www.njit.edu/features/innovations/nguyen-nature.php

8. Understanding today the light sources of tomorrow, Lab talk-Nanotechnology, Feb 7, 2013

http://nanotechweb.org/cws/article/lab/52306

9. Nanowire LEDs: study examines efficiency bottleneck, Lab talk-Nanotechnology, June 28, 2012

http://iopscience.iop.org/0957-4484/labtalk-article/50092

10. Dots deliver efficient, phosphor-free white lighting, Compound Semiconductor, May 17, 2012

http://compoundsemiconductor.net/csc/features-details/19734993/Dots-deliver-efficient,-phosphor-free-white-lighting.html

11. Different wavelengths from one material – a new freedom in LED design, Semiconductor Manufacturing & Design Community, January 3, 2012

http://semimd.com/watts/2012/01/03/different-wavelengths-from-one-material-%E2%80%93-a-new-freedom-in-led-design/

12. Toward third-generation solar cells, SPIE news room-Nanotechnology, January 7, 2011

https://spie.org/x43643.xml?ArticleID=x43643

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